| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that realization of an MOS transistor excellent in high breakdown voltage characteristic is difficult on account of a shape of an N+ type diffusion region turning into a drain lead-out region, in a conventional MOS transistor. SOLUTION: In this MOS transistor 21, a bird's beak shape part 281 of an LOCOS oxide film 28 on a drain electrode 37 side is formed large having a gentle gradient. By using the bird's beak shape part 281, the N+ type diffusion region 31 turning to the drain lead-out region is formed wide in a current passing direction having a concentration gradient. As a result, an electric field can be relived on a drain electrode 37 side to which a high voltage is applied, parasitic resistance in the drain region can be reduced, and the on-resistance of the MOS transistor 21 can be reduced. COPYRIGHT: (C)2004,JPO
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