| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic thin-film transistor element wherein a leakage current is reduced, and the missing of pixels is few. SOLUTION: In the method for manufacturing the organic thin-film transistor element wherein at least a gate electrode, an insulating layer, a source electrode, a drain electrode and an organic semiconductor layer are installed on a retaining member, after a process is performed wherein the surface of a region which is in contact with the organic semiconductor layer is subjected to plasma treatment previously, a process for arranging the organic semiconductor layer is included. COPYRIGHT: (C)2004,JPO
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