| 摘要 |
PROBLEM TO BE SOLVED: To accurately form a plurality of capacitors on a lower electrode of the capacitor for a semiconductor device having the capacitor. SOLUTION: The manufacturing method of the semiconductor device comprises a process for forming an insulation film 11 on a semiconductor substrate 1, a process for sequentially forming a first conductive film 12, a dielectric film 13 and a second conductive film 14 on the insulation film 11, a process for forming a first pattern configuration by etching the first dielectric film 14 and the conductive film 13 employing a first mask 15, a process for removing the first mask 15 and a process for forming a plurality of upper electrodes 14a of a capacitor constituted of the second conductive film 14 by simultaneously etching the first conductive film 12 and the second conductive film 14 having the configuration of the first pattern employing a second mask 16a and forming the lower electrode of the capacitor covered by the dielectric film 13 of the first pattern configuration and having a contact region, or a plate line 12a from the first conductive film 12. COPYRIGHT: (C)2004,JPO
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