Process for electrically insulating structured metal layers on a semiconductor substrate comprises applying a high density plasma oxide layer to fill a structured metal layer, planarizing the oxide layer, and applying a covering oxide layer

摘要

Process for electrically insulating structured metal layers on a semiconductor substrate comprises applying a high density plasma oxide layer (3) to fill a structured metal layer (2) up to its surface, planarizing the oxide layer using chemical-mechanical polishing selectively on the structured metal layers, and applying a covering oxide layer (5) to cover both the metal layers and the oxide layer.