发明名称 PLASMA TREATMENT DEVICE
摘要 In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).
申请公布号 KR20030083729(A) 申请公布日期 2003.10.30
申请号 KR20037011849 申请日期 2003.09.09
申请人 发明人
分类号 H01L21/205;H05H1/46;C23C16/509;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 主分类号 H01L21/205
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