| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of removing edge moat by recessing a nitride layer. CONSTITUTION: A pad oxide layer and a pad nitride layer are sequentially formed on a silicon substrate(21). A trench is formed in the silicon substrate(21). A desired width of the pad nitride layer is removed by recessing the pad nitride layer. An oxide layer is entirely filled into the trench and polished to expose the recessed nitride layer. The recessed nitride layer and the pad oxide layer are removed, thereby forming an isolation layer(26a).
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