METHOD FOR FORMING INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an interconnection of a semiconductor device is provided to be capable of preventing short between a contact plug and a metal line by immediately forming an etch stop layer before forming a contact hole. CONSTITUTION: The first etch stop layer(21), the first interlayer dielectric(22) and the second etch stop layer(23) are sequentially formed on a lower layer. After forming a contact hole and performing wet-etching of the contact hole, a contact plug(25) is formed in the contact hole. The second interlayer dielectric(26) is formed on the resultant structure. A trench is formed by selectively etching the second interlayer dielectric(26). Metal interconnections(27a,27b) are formed in the trench.