METHOD FOR FORMING METAL CONTACT AND SPACER BETWEEN METAL INTERCONNECTIONS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal contact and a spacer in a semiconductor device is provided to be capable of preventing short between metal interconnections by sufficiently obtaining space between the metal contact and metal interconnection. CONSTITUTION: A gate electrode(35) is formed on a semiconductor substrate(31). The first interlayer dielectric(41) is formed on the resultant structure. A metal contact hole is formed by patterning the first interlayer dielectric. A metal barrier layer(45) and a tungsten film(47) are formed in the metal contact hole. An etch stop layer(49a) is formed on the resultant structure. After forming a contact in the etch stop layer(49a), the second interlayer dielectric(51) is formed on the resultant structure. A metal interconnection hole(53) is formed to expose the contact by selectively etching the second interlayer dielectric. A metal interconnection barrier layer(55) and tungsten film(57) are formed in the metal interconnection hole(53).