发明名称 |
METHOD FOR REDUCING THE RESISTIVITY OF P-TYPE II-VI AND III-V SEMICONDUCTORS |
摘要 |
The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared. |
申请公布号 |
WO03090274(A2) |
申请公布日期 |
2003.10.30 |
申请号 |
WO2003US11620 |
申请日期 |
2003.04.14 |
申请人 |
KOPIN CORPORATION |
发明人 |
RICE, PETER;HON, SCHANG-JING;WANG, ALEXANDER;O'CONNOR, KEVIN |
分类号 |
H01L21/326;H01L33/00 |
主分类号 |
H01L21/326 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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