发明名称 |
Method and apparatus for detecting processing faults using scatterometry measurements |
摘要 |
A method for characterizing a misprocessed wafer includes providing a wafer having a grating structure; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and characterizing a misprocessed condition of the wafer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to characterize a misprocessed condition of the wafer based on the reflection profile.
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申请公布号 |
US6639663(B1) |
申请公布日期 |
2003.10.28 |
申请号 |
US20010863562 |
申请日期 |
2001.05.23 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MARKLE RICHARD J.;PURDY MATTHEW A. |
分类号 |
G01N21/47;G01N21/95;G01N21/956;(IPC1-7):G01N21/00 |
主分类号 |
G01N21/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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