Semiconductor device

摘要

In a semiconductor substrate, semiconductor regions belonging to the IGBT are formed in an IGBT region and semiconductor regions belonging to the diode are formed in a diode region. The IGBT and the diode are connected in anti-parallel to each other. A trench in which an insulator is buried is formed between the IGBT region and the diode region. The insulator restricts the reverse recovery current which flows from the diode region into the IGBT region. Thus, semiconductor regions of an IGBT and a diode connected in anti-parallel with each other are fabricated in a single semiconductor substrate and the chip size is reduced.