Semiconductor device and method of fabricating the same

摘要

A collector region is formed on a semiconductor substrate. An emitter electrode, an external base electrode and a gate electrode are formed on the semiconductor substrate. The position of the interface between the gate electrode and the semiconductor substrate is rendered higher than the position of the interface between the external base electrode and the semiconductor substrate. Thus provided is a semiconductor device so improved that dispersion of the withstand voltage of a gate oxide film and dispersion of characteristics such as a threshold voltage and a drain-to-source current are reduced.