| 摘要 |
A flash memory and a manufacturing method and an operating method thereof are provided. The flash memory includes a substrate, a charge-trapping structure, a first gate, a second gate, a third gate, a first doped region and a second doped region. The substrate has a protrusion portion. The charge-trapping structure is disposed over the substrate. The first gate and the second gate are disposed respectively over the charge-trapping structure at two sides of the protrusion portion. The top surfaces of the first gate and the second gate are lower than the top surface of the charge-trapping structure located on the top of the protrusion portion. The third gate is disposed over the charge-trapping structure located on the top of the protrusion portion. The first doped region and the second doped region are disposed respectively in the substrate at two sides of the protrusion portion. |
