| 摘要 |
PROBLEM TO BE SOLVED: To prevent, by a simplified method, the fall of a resist pattern generated when a fine circuit pattern is formed. SOLUTION: A resist is developed halfway at first development and a resist pattern is formed at second development via rinsing and drying processes. Here, the concentration of a first developer is set thinner than that of a second developer. This method can solve the fall of the resist pattern. COPYRIGHT: (C)2004,JPO |
