| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics by manufacturing a thin film transistor by using a semiconductor area indicating good crystallinity. <P>SOLUTION: The semiconductor device is provided with: a semiconductor layer provided with a crystalline area including a channel formation area, a source area and a drain area; a gate electrode 1205a for controlling the conductivity of the channel formation area; and the thin film transistor having a gate insulating film provided between the gate electrodes 1205a-1205d and a semiconductor layer. The semiconductor layer includes gettering areas 1203a-1203d and 1204a-1204d doped with rare gas elements. <P>COPYRIGHT: (C)2004,JPO</p> |
