INSULATED GATE THIN FILM TRANSISTOR AND ITS CONTROLLING METHOD

摘要

PROBLEM TO BE SOLVED: To electronically control the gate threshold voltage of an insulated gate transistor fabricated in a semiconductor thin film where carriers are depleted between the first and second major surfaces of a full depletion type SOI. SOLUTION: A third opposite conductivity type semiconductor region is provided in contact with the semiconductor thin film and opposite conductivity type carriers are fed from the semiconductor region to the semiconductor thin film or opposite conductivity type carriers are extracted from the semiconductor thin film to the third semiconductor region thus controlling the quantity of carriers in the semiconductor thin film. COPYRIGHT: (C)2004,JPO