CHEMICAL VAPOR DEPOSITION FOR Al-BASED III-V COMPOUND SEMICONDUCTOR, AND METHOD AND APPARATUS FOR MANUFACTURING Al-BASED III-V COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To suppress the generation of aluminum chloride (AlCl) and aluminum bromide (AlBr), which react with quartz, in the crystal growing of an Al-based III-V compound semiconductor by a conventional HVPE method. SOLUTION: Al is made to react with hydrogen halide at a temperature of 700°C or lower to suppress the generation of aluminum chloride (AlCl) and aluminum bromide (AlBr), which react with quartz. COPYRIGHT: (C)2004,JPO