SWITCHED BODY SOI (SILICON-ON-INSULATOR) CIRCUIT AND FABRICATION METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a switched body SOI CMOS circuit which is provided with an FET element for increasing a FET element threshold voltage. SOLUTION: A circuit having an SOI element is connected with a body bias voltage, via a switch for selectively connecting a body bias voltage signal with an SOI element body. An NMOS or PMOS SOI element is used as the switched body SOI element. An FET is used as a switch. A gate terminal of the SOI element is connected with an FET element. A gate of the SOI element controls the FET switch connection of the body bias voltage signal to the SOI element, and adjusts a threshold value voltage of the SOI element. A logic circuit including the SOI element and a fabrication process for the SOI element are similarly disclosed. COPYRIGHT: (C)2004,JPO