| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that level differences different in a degree of roughness and fineness are formed on a reflective preventive film and a substrate of a resist, thereby making it difficult to transfer a fine pattern on the resist. SOLUTION: A manufacturing method of a semiconductor device includes steps of: applying the reflective preventive film 15 on a film 12 having a level difference on a surface by being laminated on the main face of a substrate (B); forming a resist pattern 16 with an opening 16a positioned by being matched to a recess 12a made by surrounding a circumference in a level difference on the applied reflective preventive film 15 (C); and previously forming a groove 12b for collapsing a material of an excessive reflective preventive film 15 from upward of a level difference upper part of the circumference of the recess 12a by separating only a prescribed distance from the recess 12a during the application of the reflective preventive film 15 (A). COPYRIGHT: (C)2004,JPO
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