发明名称 |
Thin-film semiconductor epitaxial substrate and process for production thereof |
摘要 |
A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.
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申请公布号 |
US2003197185(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030394068 |
申请日期 |
2003.03.24 |
申请人 |
HIROYAMA YUICHI;TAKADA TOMOYUKI;ICHIKAWA OSAMU |
发明人 |
HIROYAMA YUICHI;TAKADA TOMOYUKI;ICHIKAWA OSAMU |
分类号 |
H01L21/331;H01L29/08;H01L29/737;(IPC1-7):H01L27/15 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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