| 发明名称 |
FORMING DEFECT PREVENTION TRENCHES IN DICING STREETS |
| 摘要 |
A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a subsequent dicing by a wafer saw. |
| 申请公布号 |
WO03046980(A3) |
申请公布日期 |
2003.10.23 |
| 申请号 |
WO2002US36577 |
申请日期 |
2002.11.15 |
| 申请人 |
INTEL CORPORATION |
发明人 |
MULLIGAN, ROSE;HE, JUN;MARIEB, THOMAS;MENEZES, SUSANNE;TOWLE, STEVEN |
| 分类号 |
B23K26/40;H01L21/00;H01L21/301;H01L21/304;H01L21/44;H01L21/78;H01L23/00 |
主分类号 |
B23K26/40 |
| 代理机构 |
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代理人 |
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