发明名称 |
Gate driver for MOS control semiconductor devices |
摘要 |
A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.
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申请公布号 |
US2003197533(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030436265 |
申请日期 |
2003.05.13 |
申请人 |
KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI |
发明人 |
KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI |
分类号 |
H02M1/00;H03K17/08;H03K17/082;H03K17/10;H03K17/56;(IPC1-7):H03B1/00 |
主分类号 |
H02M1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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