发明名称 |
Shallow trench isolation method and method for manufacturing non-volatile memory device using the same |
摘要 |
In a method for shallow trench isolation and a method for manufacturing a non-volatile memory device using the same, a hard mask layer pattern, a stopper layer pattern and an oxide film pattern are formed by patterning a hard mask layer, a stopper layer and an oxide film. A trench is formed by etching an upper portion of a substrate adjacent to the stopper layer pattern with the hard mask layer pattern. After removing the hard mask layer, a field oxide layer is formed in the trench. After etching the trench with the hard mask, the aspect ratio of the trench region is reduced by removing the hard mask prior to filling the trench, enhancing the gap filling margin of the trench fill process.
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申请公布号 |
US2003199149(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030353635 |
申请日期 |
2003.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEONG-SOO;HWANG JAE-SEUNG |
分类号 |
H01L21/762;H01L21/8247;H01L27/115;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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