发明名称 Electron beam exposure apparatus, electron beam exposure method, semiconductor device manufacturing method, and electron beam shape measuring method
摘要 An electron beam exposure apparatus for exposing a wafer by an electron beam, including: an electron beam generation section for generating the electron beam; an electron beam shaping member with a plurality of openings for shaping the electron beam; a deflecting section for deflecting the electron beam which has passed through the electron beam shaping member; and a deflection correction control section for controlling the deflecting section based on a position of the opening of the electron beam shaping member through which the electron beam passes. The deflecting section deflects the electron beam and corrects distortion of an image of the electron beam on the wafer.
申请公布号 US2003197135(A1) 申请公布日期 2003.10.23
申请号 US20030422407 申请日期 2003.04.23
申请人 ADVANTEST CORPORATION 发明人 YAMADA AKIO
分类号 H01J37/12;H01J37/14;H01J37/302;H01J37/304;H01J37/317;H01L21/027;H01L21/30;(IPC1-7):H01J37/304 主分类号 H01J37/12
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