发明名称 METHOD AND APPARATUS FOR UNDERFILLING SEMICONDUCTOR DEVICES
摘要 <p>A method and apparatus for underfilling a gap (40) between a multi-sided die (32) and a substrate (34) with an encapsulant material (10). The die (32) and/or the substrate (34) is heated non-uniformly by a heat source to generate a temperature gradient therein. The heated one of the die (32) and the substrate (34) transfers heat energy in proportion to the temperature gradient to the encapsulant material (44) moving in the gap (40). The differential heat transfer steers, guides or otherwise directs the movement of the encapsulant material (44) in the gap (40). The temperature gradient may be established with heat transferred from the heat source to the die (32) and/or the substrate (34) by conduction, convection, or radiation. The temperature gradient may be dynamically varied as the encapsulant material (44) moves into the gap (40).</p>
申请公布号 WO2003088348(P1) 申请公布日期 2003.10.23
申请号 US2003010767 申请日期 2003.04.09
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址