| 摘要 |
<p>A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates (122), such as sapphire. Semiconductor layers (124, 126, 128) are produced on the insulating substrate (122) using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers (124, 126, 128) and into the insulating substrate (122), beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer (154). A metal support structure (156) is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate (122) is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.</p> |
