| 摘要 |
PURPOSE: The method for forming layer low dielectric barrier of double layers for mutual connection is provided to reduce a thickness of SiN cap and improve an adhesion for copper. CONSTITUTION: The method includes the steps of preparing a substrate having a copper conductor, putting a metal alloy film including phosphor or boron as a protective layer, on the copper conductor, carrying out the first annealing process to diffuse a metal alloy including phosphor or boron into 2-4 atom layers at least, on the top of the copper conductor, then putting a dielectric film with low dielectric constant on the metal alloy film including phosphor or boron, and carrying out the second annealing process. The obtained structure has a double layer barrier which includes the metal alloy film including phosphor or boron on the copper conductor and the dielectric material film on the metal alloy film, and shows superior barrier and adhesive characteristics for the copper conductor.
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