发明名称 |
Semiconductor junction profile and method for the production thereof |
摘要 |
A planar slice (1) of semiconductor substrate material of a first conductivity type is provided on one face with a first region (13a) of a second conductivity type having a higher dopant concentration than that of the substrate and on the opposite face a second region (13b) of said second conductivity type having a higher dopant concentration than that of the substrate. Each of the faces has had removed from part of it a depth of material which increases gradually as the outer edge is approached so that the junction between each of the regions (13a, 13b) and the substrate is exposed along a path following the shape of the perimeter of the slice but so that the removal of material ceases at a distance outwardly beyond the exposure of the junction to leave a rim (11) of the original planar faces of the slice at its perimeter. <IMAGE> |
申请公布号 |
EP1128440(A3) |
申请公布日期 |
2003.10.22 |
申请号 |
EP20010301158 |
申请日期 |
2001.02.09 |
申请人 |
WESTCODE SEMICONDUCTORS LIMITED |
发明人 |
GARRETT, JOHN MANSELL |
分类号 |
H01L21/304;H01L21/02;H01L29/06 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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