| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing delamination, the corrosion of a metal thin film, and the deterioration of adhesion due to the mobility of impurities at an oxide layer containing the impurities by flowing reaction gas, such as SiH4 or H2 gas, after forming a via hole. CONSTITUTION: An oxide layer(5) containing impurities, is formed at the upper portion of a semiconductor substrate(1). After depositing an upper oxide layer(6) on the impurity-containing oxide layer, a polishing process is carried out at the upper oxide layer. A via hole is formed by selectively etching the upper oxide layer and the impurity-containing oxide layer for partially exposing a lower metal line(3). A low impurity region(8) is formed at the predetermined portion of the impurity-containing oxide layer by flowing at least one kind of gas containing hydrogen on the entire surface of the resultant structure. Then, the via hole is filled with predetermined metal(10).
|
