发明名称 |
Electrode for phase change memory device |
摘要 |
A memory device (10) includes a composite electrode (12) that includes a dielectric mandrel (13) that is connected with a substrate (11) and having a tapered shape that terminates at a vertex (V). An electrically conductive material (15) conformally covers the dielectric mandrel (13) and terminates at a tip (T). A first dielectric layer (17) covers all of the composite electrode (12) except an exposed portion (E) of the composite electrode (12) that is adjacent to the tip (T). A phase change media (19) is in contact with the exposed portion (E). The exposed portion (E) is only a small percentage of an overall surface area of the composite electrode (12) so that a contact footprint (Ac) between the exposed portion (E) and the phase change media (19) is small relative to a surface area (AM) of the phase change media (19) and Joule heat (jh) transfer from the phase change media (19) into the composite electrode (12) is reduced. <IMAGE>
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申请公布号 |
EP1355365(A2) |
申请公布日期 |
2003.10.22 |
申请号 |
EP20030252117 |
申请日期 |
2003.04.03 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
LEE, HEON;LAZAROFF, DENNIS M. |
分类号 |
H01L27/10;H01L27/105;H01L27/24;H01L45/00;(IPC1-7):H01L45/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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