| 摘要 |
A method of fabricating an MRAM device includes patterning a magnetic stack material layer (142) using a herd mask (146) formed by a "plate-through" technique. A resist (144) is deposited over magnetic stack material (142), and the resist (144) is patterned, exposing regions of the magnetic stack material (142). A hard mask (146) is formed over the magnetic stack material (142) exposed regions through the resist (144), and the hard mask (146) is used to pattern magnetic tunnel junctions (MTJ's) of the MRAM device. Electroplating, electro-less plating, sputtering, physical vapor deposition (PVD), evaporation deposition, or combinations thereof are used to deposit a material comprising a metal over the magnetic stack material (142) exposed regions to form the hard mask (146).
|
