发明名称 Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof
摘要 An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.
申请公布号 US6635889(B2) 申请公布日期 2003.10.21
申请号 US20020050843 申请日期 2002.01.18
申请人 SUMITOMO EATON NOVA CORPORATION 发明人 TSUKIHARA MITSUKUNI;KABASAWA MITSUAKI;TAKAHASHI YUJI;SUGITANI MICHIRO
分类号 C23C14/48;H01J27/02;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J37/08 主分类号 C23C14/48
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