发明名称 |
Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
摘要 |
A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.
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申请公布号 |
US6635577(B1) |
申请公布日期 |
2003.10.21 |
申请号 |
US19990280462 |
申请日期 |
1999.03.30 |
申请人 |
APPLIED MATERIALS, INC |
发明人 |
YAMARTINO JOHN M.;LOEWENGARDT PETER K.;HUANG KENLIN;MA DIANA XIAOBING |
分类号 |
H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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