发明名称 Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system
摘要 A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.
申请公布号 US6635577(B1) 申请公布日期 2003.10.21
申请号 US19990280462 申请日期 1999.03.30
申请人 APPLIED MATERIALS, INC 发明人 YAMARTINO JOHN M.;LOEWENGARDT PETER K.;HUANG KENLIN;MA DIANA XIAOBING
分类号 H01L21/3213;(IPC1-7):H01L21/302 主分类号 H01L21/3213
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