| 摘要 |
A system for fabricating an integrated circuit is disclosed that includes providing a semiconductor substrate (10), and forming a gate oxide layer (12) on an active area on the substrate. A polysilicon gate (14) is formed, on top of the gate oxide, by etching. Etch damage (16) on the substrate surface is repaired by anneal in an inert gas environment-e.g., He, Ne, N2, Ar gas, or combinations thereof.
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