| 摘要 |
PURPOSE: A method for forming a gate electrode of polycide structure is provided to prevent degradation of a gate oxide layer by minimizing stress due to phase shift of polysilicon. CONSTITUTION: A gate oxide layer(2) and a polysilicon layer(3) are sequentially formed on a semiconductor substrate(1). An amorphous phase in the polysilicon layer is crystallized by annealing while rising the temperature to 5 and below per minute. A metal film is formed on the resultant structure. By annealing the resultant structure, a silicide layer(4) is formed on the crystallized polysilicon layer.
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