| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a lead frame for semiconductor device by which Pb liberalization, dry process making, a suppression in natural erosion are realized simultaneously without changing conventional production equipment in an assembling process. <P>SOLUTION: On a base material 1 based on Fe, a barrier layer 3 consisting of a metal whose standard electrode potential is not higher than -0.44 V, an Ni layer 4, a Pd layer 5 are formed in order, and an Au layer 6 is formed on the most surface. <P>COPYRIGHT: (C)2004,JPO</p> |
