| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor that can suppress the variation of its characteristics. <P>SOLUTION: This thin film transistor 1 has an Si semiconductor layer 4 provided on a glass substrate 2 through an SiO<SB>2</SB>base insulating film 3, source and drain regions 8 and 9 respectively provided in both end sections of the semiconductor layer 4, and a channel region 10 provided in the semiconductor layer 4 between the source and drain regions 8 and 9. This transistor 1 also has a gate electrode 7 provided on the channel region 10 through an SiO<SB>2</SB>gate insulating film 6. In this transistor 1, the tapered angle of at least the channel region 10 covered with the gate electrode 7 in the widthwise direction WD of the region 10 is set to about 60°or larger. <P>COPYRIGHT: (C)2004,JPO</p> |
