| 摘要 |
PROBLEM TO BE SOLVED: To provide a TFT forming method. SOLUTION: An active region pattern 106 is provided with a source region pattern, a drain region pattern and a slanted type channel pattern which are transferred on an amorphous silicon layer on a substrate. Metal nonelectrolytic plating or a chemical substitution process is performed to the pattern 106, and a plurality of metal clusters 108 are formed so as to come into close contact with the side wall of the pattern 106. A metal induction side crystal process is performed to the pattern 106, the active region pattern of amorphous silicon is crystallized, and a polycrystalline silicon active region is formed which is provided with a source region, a drain region and a slanted type channel. The formation of a parallel polycrystalline silicon crystal grain is caused by the metal clusters adjacent to the slanted type channel side wall. The crystal grain direction of the polycrystalline silicon crystal grain of the slanted type channel is made vertical with respect to a gate which is formed on the slanted type channel. COPYRIGHT: (C)2004,JPO
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