SEMICONDUCTOR DISPLAY DEVICE, ITS MANUFACTURING METHOD, AND ACTIVE-MATRIX DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor display device that can suitably maintain its display quality even when the device is manufactured through a step of producing a polycrystalline semiconductor by irradiating an amorphous semiconductor positioned above a light shielding layer with laser light, and to provide a method of manufacturing the device.

SOLUTION: A light shielding layer 2 is formed on a glass substrate 1 and a silicon nitride layer 3 and a silicon oxide layer 4 are laminated upon the substrate 1 and layer 2. On the silicon oxide layer 4, an amorphous silicon layer which becomes a polycrystalline silicon layer 10 constituting a transistor DTFT is formed. Then the polycrystalline silicon layer 10 is produced by irradiating the amorphous silicon layer 4 with laser light.

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