SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can avoid a lowering in reliability of a gate insulation film caused by height difference of an embedding oxide film by an STI method between a memory cell region and a peripheral circuit region and improve withstand voltage property of a gate insulation film, and to provide its manufacturing method.

SOLUTION: The semiconductor device has a silicon substrate 10 with a memory cell region and a peripheral circuit region, a silicon oxide film 16a which is embedded in a memory cell region 12 of the silicon substrate 10 and defines an element active region in the memory cell region 12 and a silicon oxide film 16a which is embedded in a peripheral circuit region 14 of the silicon substrate 10 and defines an element active region in the peripheral circuit region 14. The height of the surface of the silicon oxide film 16b is higher than that of the surface of the silicon oxide film 16a.

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