| 摘要 |
PROBLEM TO BE SOLVED: To provide a bottom gate type thin film transistor that has source and drain regions constituted by the self-aligning technique and is provided with a CMOS structure constituted without increasing a device area, and to provide a method of manufacturing the transistor. SOLUTION: This thin film transistor has a gate electrode 3 provided on the surface of an insulating substrate 1, a gate insulating film 4 provided from the surface of the substrate 1 to the surface of the gate electrode 3, and a semiconductor layer 5 provided on the surface of the insulating film 4. This transistor also has channel areas 6 provided in the semiconductor layer 5 of different polarities positioned on both side faces of the gate electrode 3. COPYRIGHT: (C)2004,JPO |
