| 摘要 |
PROBLEM TO BE SOLVED: To incorporate a large capacity capacitor into an SOI substrate. SOLUTION: A depletion layer 12, which is formed in the interface on one side (near a silicon oxide film 2) of a silicon substrate 1, is used as a bypass capacitor CJVB. That is, one side (near the silicon oxide film 2) of the depletion layer 12 is electrically connected to a power supply line (not shown) via a high concentration impurity region 1a, a wire 10b, the drain (an impurity region 3b), channel region (an impurity region 3c), source (an impurity region 3a) of a transistor, and a wire 10a. The other side (far from the silicon oxide film 2) of the depletion layer 12 is electrically connected to a ground line via a high concentration impurity region 1b and a wire 10c. COPYRIGHT: (C)2004,JPO
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