发明名称 |
Method of forming deposited film |
摘要 |
Sputtering particles emitted from a target are ionized by the Penning ionization process. And the sputtering particles ionized are caused to fly in the direction of the substrate by a magnetic field formed by ambipolar diffusion due to a magnetic field generating means without scattering the particles to deposit the particles on the substrate. The partial pressure of a sputtering discharge gas in a discharge space is set to 1.3 Pa or less and a distance from the target to an ionization space is within twice the mean free path of the partial pressure of the sputtering discharge gas.
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申请公布号 |
US2003192778(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
US20030409190 |
申请日期 |
2003.04.09 |
申请人 |
YAMAGUCHI HIROHITO;KANAI MASAHIRO;KOIKE ATSUSHI;OYA KATSUNORI |
发明人 |
YAMAGUCHI HIROHITO;KANAI MASAHIRO;KOIKE ATSUSHI;OYA KATSUNORI |
分类号 |
C23C14/34;C23C14/14;C23C14/35;C23C14/46;H01J37/34;H01L21/285;(IPC1-7):C23C14/32 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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