发明名称 Method of forming deposited film
摘要 Sputtering particles emitted from a target are ionized by the Penning ionization process. And the sputtering particles ionized are caused to fly in the direction of the substrate by a magnetic field formed by ambipolar diffusion due to a magnetic field generating means without scattering the particles to deposit the particles on the substrate. The partial pressure of a sputtering discharge gas in a discharge space is set to 1.3 Pa or less and a distance from the target to an ionization space is within twice the mean free path of the partial pressure of the sputtering discharge gas.
申请公布号 US2003192778(A1) 申请公布日期 2003.10.16
申请号 US20030409190 申请日期 2003.04.09
申请人 YAMAGUCHI HIROHITO;KANAI MASAHIRO;KOIKE ATSUSHI;OYA KATSUNORI 发明人 YAMAGUCHI HIROHITO;KANAI MASAHIRO;KOIKE ATSUSHI;OYA KATSUNORI
分类号 C23C14/34;C23C14/14;C23C14/35;C23C14/46;H01J37/34;H01L21/285;(IPC1-7):C23C14/32 主分类号 C23C14/34
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