发明名称 |
Dual double gate transistor and method for forming |
摘要 |
The present invention provides a dual gate transistor and a method for forming the same that results in improved device performance and density. The present invention uses a double gate design to implement a dual gate transistor. A double gate is a gate which is formed on both sides of the transistor body. The present invention thus provides a transistor with two double gates in series that provide improved current control over traditional dual gate designs. The preferred embodiment of the present invention uses a fin type body with dual double-gates. In a fin type structure, the double gates are formed on each side of a thin fin shaped body, with the body being disposed horizontally between the gates.
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申请公布号 |
US2003193065(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
US20020063323 |
申请日期 |
2002.04.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FRIED DAVID M.;NOWAK EDWARD J. |
分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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