发明名称 |
METHOD FOR DOPING GALLIUM NITRIDE (GaN) SUBSTRATES AND THE RESULTING DOPED GaN SUBSTRATE |
摘要 |
A method for doping Gallium Nitride (GaN) substrates is provided wherein Gallium (Ga) is transmuted to Germanium (Ge) by applying thermal neutron irradiation to a GaN substrate material or wafer. The Ge is introduced as an impurity in GaN and acts as a donor. The concentration of Ge introduced is controlled by the thermal neutron flux. When the thermal neutron irradiation is applied to a GaN wafer the fast neutrons are transmuted together with the former and cause defects such as the collapse of the crystallization. The GaN wafer is thermally treated or processed at a fixed temperature to eliminate such defects. |
申请公布号 |
WO03063206(A3) |
申请公布日期 |
2003.10.16 |
申请号 |
WO2003US01538 |
申请日期 |
2003.01.16 |
申请人 |
GAN SEMICONDUCTOR, INC. |
发明人 |
CHO, HAK, DONG;KANG, SANG, KYU |
分类号 |
H01L21/261;H01L21/324;H01L33/02;H01L33/32 |
主分类号 |
H01L21/261 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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