Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability

摘要

A method of making a semiconductor device is described. That method comprises forming a conductive layer that contacts a via, wherein the conductive layer includes a sufficient amount of a dopant, which will diffuse in the direction that is opposite to the direction in which electrons will flow through the conductive layer, to reduce the electromigration of the material that comprises the bulk of the conductive layer without significantly increasing the conductive layer's resistance.