| 摘要 |
<p>A plasma etching method characterized in that it comprises an arrangement step of arranging a pair of electrodes in a chamber, placing a substrate to be processed and having a silicon film and an inorganic material film adjacently between the electrodes, and allowing one of the electrodes to support the substrate and an etching step of applying a high-frequency power to at least one of the electrodes to produce a high-frequency electric field between the pair of electrodes, supplying a process gas into the chamber to produce a plasma of the process gas by the electric field, and plasma-etching the silicon film of the substrate by the plasma, and that in the etching step, the frequency of the high-frequency power applied to at least one of the electrodes is in the range from 50 to 150 MHz.</p> |
