| 摘要 |
<p>Figure 1 shows the method and system for generating a metal thin film (170) with a uniform crystalline orientation and a controlled crystalline microstructure are provided. For example, a metal layer is irradiated with a pulse laser (111) to completely melt the film throughout its entire thickness. The metal layer can then resolidify to form grains with a substantially uniform orientation. The resolidified metal layer can be irradiated with a sequential lateral solidification technique to modify the crystalline microstructure (e.g., create larger grains, single-crystal regions, grain boundary controlled microstructures, etc.) The metal layer can be irradiated by patterning a beam using a mask (150) which includes a first region capable of attenuating (130) the pulsed laser and a second region allowing complete irradiation of sections of the thin film being impinged by the masked laser beam. An inverse dot-patterned mask (150) can be used, the microstructure that may have substantially the same as the geometric pattern as that of the dots of the mask.</p> |
