发明名称 |
Methods for transistor gate formation using gate sidewall implantation |
摘要 |
Methods are disclosed for semiconductor device fabrication in which MOS transistor gates are to be formed. Polysilicon gate structures and sidewall spacers are formed, with upper portions of the gate sidewalls exposed. Angled implantation processing is employed to impart dopants to the top and exposed sidewall portions of the gate structure to mitigate poly depletion.
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申请公布号 |
US2003194851(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
US20020123686 |
申请日期 |
2002.04.16 |
申请人 |
JOHNSON F. SCOTT;GRIDER TAD;MCKEE BENJAMIN P. |
发明人 |
JOHNSON F. SCOTT;GRIDER TAD;MCKEE BENJAMIN P. |
分类号 |
H01L21/265;H01L21/28;H01L21/324;H01L21/336;H01L29/49;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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