| 摘要 |
<p>PURPOSE:To make an action highly speedy by installing a capacity cut MOSFET and using a control signal seperated from a load circuit of a word wire, etc. CONSTITUTION:When a stage circuit G composing an address decoder XDCR forms a high level non-selecting signal like power source voltage Vcc, an N channel MOSFETQ18 of a CMOS invertor circuit is on. At this time, when an output signal of the gate circuit G is set to a high level like power source voltage Vcc, a cut MOSFETQ16 is off. On the other hand, by a P channel MOSFETQ17 which is still on, gate voltage of a P channel MOSFETQ14 is set to a low level. Thus, since the P channel MOSFETQ14 is on and high voltage Vpp is applied to a gate of a P channel MOSFERQ15, the P channel MOSFETQ15, is set to off and a word wire W is set to a low level non-selecting condition.</p> |
